silicon planar pnp transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8069 issue 1 page 1 of 3 2N1132 ? high speed switching ? hermetic to-39 metal package. ? ideally suited for small signal general purpose and switching applications ? screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage -50v v ceo collector ? emitter voltage -40v v ebo emitter ? base voltage -5v i c continuous collector current -600ma p d total power dissipation at t a = 25c 600mw derate above 25c 3.4mw/c p d total power dissipation at t c = 25c 2w derate above 25c 11.4mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 292 c/w r jc thermal resistance, junction to case 87.5 c/w
silicon planar pnp transistor 2N1132 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8069 issue 1 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = -10ma i b = 0 -40 v (br)cbo collector-base breakdown voltage i c = -10a i e = 0 -50 v v cb = -50v i e = 0 -10 v cb = -30v i e = 0 -1.0 i cbo collector cut-off current t a = 150c -100 i ebo emitter cut-off current v eb = -5v i c = 0 -100 a i cer collector cut-off current v ce = -50v r be <= 10 -10 ma v ce(sat) (1) collector-emitter saturation voltage i c = -150ma i b = -15ma -1.3 v be(sat) (1) base-emitter saturation voltage i c = -150ma i b = -15ma -1.5 v i c = -5ma v ce = -10v 25 h fe (1) forward-current transfer ratio i c = -150ma v ce = -10v 30 100 dynamic characteristics i c = -50ma v ce = -10v | h fe | small signal forward-current transfer ratio f = 20mhz 3.0 20 v cb = -10v i e = 0 c obo output capacitance f = 1.0mhz 45 v eb = -0.5v i c = 0 c ibo input capacitance f = 1.0mhz 80 pf t d delay time 15 t r rise time i c = -150ma v cc = -30v 25 t s storage time i b1 = - i b2 = -15ma 80 t f fall time 25 ns notes notes notes notes (1) pulse width 300us, 2%
silicon planar pnp transistor 2N1132 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8069 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) to - 39 (to - 205ad ) metal package underside view pin 1 - emitter pin 2 - base pin 3 - collector 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045)
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